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Ultra-high strain in epitaxial silicon carbide nanostructures

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual© 2009-2018 ScienceWISE project | About | FAQ | Contact us |

Wet Oxidation for Silicon Carbide (1204.5556) - ScienceWISE

be the intrinsic origin of negative fixed charge in SiC thermal oxidation. © 2009-2018 ScienceWISE project | About | FAQ | Contact us |

News: Global Silicon Carbide (SiC) Semiconductor Materials

News: Silicon Carbide (SiC) Semiconductor Materials and Devices Market Request for Sample Report @ em>wiseguyreports.com/sample-request/937716-

Atomistic modeling of amorphous silicon carbide: An

used to generate realistic configurations of amorphous silicon carbide (a-SiC© 2009-2018 ScienceWISE project | About | FAQ | Contact us |

in irradiated silicon carbide (0709.1402) - ScienceWISE

Theoretical study of the recombination of Frenkel pairs in irradiated silicon carbide Guillaume Lucas, Laurent Pizzagalli Materials Science The recombinatio

in AGB silicon carbide stardust (0712.3702) - ScienceWISE

Mainstream silicon carbide (SiC) stardust formed in the extended envelopes grainsInterstellar mediumCrab NebulaTime delayIsotopic abundanceGiant branch sta

Optical constants of silicon carbide for astrophysical

ScienceWISE Ontology Bookmarks New articles News silicon carbide (SiC) are presented from 1200--grainsFull width at half maximumTransmittanceSpectral

spin defects in silicon carbide (1403.7741) - ScienceWISE

Atomic-scale defects in silicon carbide are very attractive in this respect © 2009-2018 ScienceWISE project | About | FAQ | Contact us |

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metal spins in silicon carbide (1802.06714) - ScienceWISE

LasersExcited stateCarbidePhononDiamondNitrogen vacancyDephasing timeQuantum © 2009-2018 ScienceWISE project | About | FAQ | Contact us |

sublimation of silicon carbide (1103.3552) - ScienceWISE

developing epitaxial graphene on silicon carbide (EG) as a new electronic © 2009-2018 ScienceWISE project | About | FAQ | Contact us |

of a silicon carbide color center (1609.03918) - ScienceWISE

ScienceWISE Ontology Bookmarks New articles News IntroductionLoginRegisterPoint defects in silicon carbide are rapidly becoming a platform of great

Isolated electron spins in silicon carbide with millisecond-

ScienceWISE Ontology Bookmarks New articles News IntroductionLoginRegisterIsolated electron spins in silicon carbide with millisecond-coherence times

vacancy qubits in silicon carbide (1210.0505) - ScienceWISE

All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications. CarbideQubitQuantum dotsSemiconductorLasersPhononQ

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of silicon carbide nanowires (0904.2421) - ScienceWISE

The energetic stability and electronic properties of hydrogenated silicon carbide  nanowires (SiCNWs) with zinc blende (3C) and wurtzite (2H) structures

Infrared absorption property of silicon carbide-silica nano

Infrared absorption property of silicon carbide-silica nanocables synthesized by© 2009-2018 ScienceWISE project | About | FAQ | Contact us |

Thermoelectric Properties of Silicon Carbide Nanowires with

The thermoelectric properties of cubic zincblend silicon carbide nanowires (© 2009-2018 ScienceWISE project | About | FAQ | Contact us |

The case of silicon carbide (1805.00557) - ScienceWISE

in a semiconductor material of great technological interest: silicon carbide. © 2009-2018 ScienceWISE project | About | FAQ | Contact us |

vacancies in silicon carbide (1707.02715) - ScienceWISE

the silicon vacancy defects in the 4H polytype of silicon carbide (SiC).© 2009-2018 ScienceWISE project | About | FAQ | Contact us |

Late formation of silicon carbide in type II supernovae (1801

We have found that individual presolar silicon carbide (SiC) dust grains © 2009-2018 ScienceWISE project | About | FAQ | Contact us |

Meteoric Silicon Carbide Grains (Guber:1997zz) - ScienceWISE

New 142, Nd-144 (n, gamma) Cross Sections and the s-process Origin of the Nd Anomalies in Presolar Meteoric Silicon Carbide Grains

Silicon Carbides from Murchison (1501.05883) - ScienceWISE

We present strontium, barium, carbon, and silicon isotopic compositions of 61 acid-cleaned presolar SiC grains from Murchison. Comparison with previous

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Silicon Carbide Nuclear Spin Bath (1409.4646) - ScienceWISE

spin decoherence of single defects in silicon carbide (SiC) nuclear spin © 2009-2018 ScienceWISE project | About | FAQ | Contact us |

coated with Silicon Carbide Film (1412.5963) - ScienceWISE

between two metamaterial substrates coated with silicon carbide (SiC) thin © 2009-2018 ScienceWISE project | About | FAQ | Contact us |

in irradiated silicon carbide (0709.1402) - ScienceWISE

Theoretical study of the recombination of Frenkel pairs in irradiated silicon carbide Guillaume Lucas, Laurent Pizzagalli Materials Science The recombinatio

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-boron doped silicon carbide (0808.0231) - ScienceWISE

stochiometric mixture of heavily boron-doped silicon carbide (SiC:B)© 2009-2018 ScienceWISE project | About | FAQ | Contact us |

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