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Method for making a silicon carbide resistor with silicon/

200553-A method for bonding an electrically conductive silicon carbide structure to an electrically conductive siliconized silicon carbide structur

And Methods Employing Amorphous Silicon Carbide Resistor

Directory of patents related to Integrated Circuit Devices And Methods Employing Amorphous Silicon Carbide Resistor Materials (5 patents): Integrated circuit

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The Silicon Graybeard: March 2012

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Silicon carbide chrome thin-film resistor - Patent # 6081014

A thin-film resistor is formed from silicon, carbon, and chromium. The resistivity of the thin-film resistor, and therefore the resistance and temperature

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in p-type 3C-SiC at high temperatures characterized using

Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications

Silicon Carbide - AEP

Silicon Carbide Varistors are voltage dependent resistors with symmetric voltage/current characteristics and are therefore suitable for use with direct and

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2009427-tapped Silicon Chip Resistors For Hi-Rel to thermal shock and high-temperature exposure1200V silicon-carbide Schottky-barrier diode

Semiconductor Device of Polycrystalline Silicon Resistors

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resistors on characteristics of high sensitive silicon

This study presents four new silicon piezoresistive microcantilevers designs for biosensor application and compares their surface stress sensitivities

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200923-OnChip Introduces a family of high reliability Thin Film wire-bonable Silicon Resistor Chips for Medical, Aerospace, Military, Communication

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At room temperature and VDD = 5.0 V, the high speed spindle, improve the sensitivity and the piezoresistors were selected as p-Si, and

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World’s Smallest Wire-bondable Silicon Chip Resistors

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# 4,086,559. Electric resistor based on silicon carbide

An electric resistor having a negative temperature coefficient of the electrical resistance whose resistance body consists of p-type doped pyrolytic Ea

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Stable silicon resistors at 20-160°C due to divacancy

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to “High-ohmic resistors fabricated by PureB layer for

Corrigendum to “High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications” [Solid State Electron. 105 (2015) 6–11]

Semiconductor Device of Polycrystalline Silicon Resistors

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High Surge Axial Cemented Wirewound Resistors - PDF

High Surge Axial Cemented Wirewound Resistors FEATURES High voltage surge (up to 12 kv) withstanding capability Non flammable silicon cement coating High

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